From sheets to stacks, new nanostructures promise leap for advanced electronics

Scientists from Tokyo Metropolitan University have successfully engineered multi-layered nanostructures of transition metal dichalcogenides that meet in-plane to form junctions. They grew out layers of multi-layered structures of molybdenum disulfide from the edge of niobium doped molybdenum disulfide shards, creating a thick, bonded, planar heterostructure. They demonstrated that these may be used to make new tunnel field-effect transistors (TFET), components in integrated circuits with ultra-low power consumption.