Study resolves long-standing debate on low-pressure phase transitions in hafnium oxide

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Researchers from the Institute of Solid State Physics, the Hefei Institutes of Physical Science of the Chinese Academy of Sciences, in collaboration with Southwest Jiaotong University, have combined high-pressure electrical transport experiments, high-pressure Raman spectroscopy, and first-principles calculations to reveal the structural phase transition behavior of hafnium oxide (HfO2) under high pressure and its evolution mechanism in electrical properties.
Source: phys.org
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